In an exciting development for tech enthusiasts, a new Geekbench listing has unveiled key details about the upcoming Snapdragon 8 Gen 4 for Galaxy, set to launch early next year. The processor’s P-core cluster is clocked at an impressive 4.47 GHz, appearing alongside the European Galaxy S25 Ultra variant equipped with 12 GB of RAM.
Recently, the Snapdragon 8 Gen 4 for Galaxy was spotted alongside a North American Galaxy S25 Ultra version. However, its performance metrics were a bit tame, with the P-core cluster at 4.19 GHz and E-cores at 2.9 GHz. In comparison, the regular Snapdragon 8 Gen 4 clocks in at 4.32 GHz for P-cores and 3.53 GHz for E-cores. The latest Geekbench listing reveals higher clock speeds for the European model, specifically 4.47 GHz for P-cores and 3.53 GHz for E-cores, suggesting these could be the final specs when the retail Galaxy S25 Ultra hits the market next year.
Despite the notable increase in clock speeds, the chip’s single-core performance appears to have plateaued. This sample of the Snapdragon 8 Gen 4 for Galaxy scored 3,011 in single-core and 9,706 in multi-core performance on Geekbench 6.2. While the multi-core score is significantly higher than the initial sample’s 9,080, the single-core numbers remain static. Nevertheless, with further optimizations, it’s possible that the chip could exceed 10,000 in multi-core scores once it’s commercially available.
It’s worth noting that despite these advancements, Apple may continue to dominate the single-core performance arena until the arrival of the 5.0 GHz Snapdragon 8 Gen 5 next year. The evolving competition between these tech giants promises continued innovation and performance enhancements, keeping consumers on their toes for the next big leap in smartphone technology.
Stay tuned for more updates as we get closer to the official launch of the Galaxy S25 Ultra and its powerhouse Snapdragon 8 Gen 4 for Galaxy.
