China’s high-bandwidth memory (HBM) technology has achieved a significant breakthrough. One of the country’s leading DRAM manufacturers has started mass production of HBM3 chips, utilizing an advanced, homegrown 16nm G4 process. According to industry insiders, samples have already been sent to Huawei, and the product is currently in the final stages of verification. This development marks a key moment in China’s tech landscape, showcasing its growing capabilities in domestic semiconductor production.
