SK hynix is gearing up for a transformative leap in DRAM technology with an ambitious push towards 1c DRAM. This move is set to elevate DDR5 and HBM products, positioning the company as a leader in the field.
The firm is focusing on employing Extreme Ultraviolet (EUV) lithography for its next-generation DRAM. By potentially being the first to adopt six EUV layers, SK hynix intends to establish new market benchmarks and significantly enhance its consumer and HBM offerings.
EUV lithography is a complex yet powerful technique that uses a 13.5-nm wavelength to create intricate circuitry with fewer multi-patterning steps. Historically, a mix of EUV and Deep Ultraviolet (DUV) layers characterized DRAM production. However, SK hynix plans to fully transition to six EUV layers with its 1c DRAM, aiming for higher yields, improved performance, and increased profit margins.
Though 1c DRAM hasn’t appeared in conventional consumer memory yet, SK hynix is exploring various applications, with the potential for DDR5 RAM featuring larger capacities. This long-term commitment to EUV indicates that future technologies like 1d and 0a DRAM will increasingly rely on these advancements, with High-NA EUV integration also on the horizon.
By integrating EUV, SK hynix aims to deliver denser, faster, and more energy-efficient DDR5 and substantial HBM stacks, all with enhanced yields. Notably, 1c DRAM is poised to make a prominent entry with HBM4, promising significant performance leaps in upcoming innovations.
