Samsung Electronics is reportedly preparing to stop producing 2D (planar) NAND flash at its Hwaseong Line 12 facility, marking a clear step away from an older generation of NAND manufacturing. The company is expected to convert the line into a 1c DRAM “end” fab, shifting resources toward more advanced DRAM production rather than continuing with planar NAND.
If this move goes forward, it would effectively formalize Samsung’s exit from planar NAND manufacturing at this site. Planar NAND, once a major milestone for storage, has largely been eclipsed by newer technologies as the memory industry pushed toward higher density and better efficiency. By stepping back from 2D NAND, Samsung would be aligning its production footprint with where demand and long-term performance improvements are strongest.
The conversion of Hwaseong Line 12 into a 1c DRAM-focused facility also signals a larger strategy: prioritize next-generation memory nodes and concentrate investment where it can deliver competitive advantages. “1c DRAM” refers to a more advanced DRAM process generation, and dedicating an end fab to it suggests an emphasis on scaling output and improving yields for modern DRAM products.
For the broader memory market, a shift like this can matter because it changes how much capacity is available for different types of chips. Less legacy NAND production and more advanced DRAM capacity could influence supply dynamics over time, especially as AI infrastructure, data centers, and high-performance devices continue to drive demand for newer memory technologies.
In short, Samsung’s reported plan to retire 2D NAND at Hwaseong Line 12 and transform the site into a 1c DRAM end fab reflects an industry-wide reality: older memory processes are being phased out, while advanced DRAM manufacturing becomes a bigger priority in the race for performance, density, and efficient production.
