Samsung is gearing up to revolutionize the world of data storage with its next-generation 400-layer V-NAND technology, set to enhance both capacity and reliability for advanced storage solutions. The company is ambitiously pushing the envelope, with future plans to develop V-NAND with up to 1,000 layers.
In a bold move, the tech giant began mass production of its QLC 9th generation V-NAND last month, aimed at boosting performance and storage capabilities. Looking ahead, they’ve set their sights on even more impressive heights with their upcoming 10th generation V-NAND slated for release in 2026. This iteration will boast a groundbreaking 400-layer configuration—a remarkable increase of 43% more layers than its 9th-generation predecessor.
Samsung plans to achieve this impressive feat through the implementation of Bonding Vertical (BV) NAND technology, a shift from the current Circuit on Periphery (CoP) design. Unlike the CoP design, where peripheral circuits sit atop the memory stack, the BV method involves manufacturing storage and peripheral circuits separately before vertically bonding them. This innovative approach not only boosts storage capability but also minimizes potential circuit damage during stacking. It’s a game-changer, drawing comparisons to techniques like YMTC’s Xtacking and Kioxia-Western Digital’s CMOS Bonded Array (CBA). With vertical bonding, Samsung aims to achieve nearly 60% higher bit density, dramatically increasing storage capacity without expanding physical space.
The company’s ambitions don’t stop here. Samsung envisions a future with VNAND reaching an astonishing 1,000 layers, likely manifesting in the 11th generation V-NAND around 2027. This would signify a 2.5-fold increase in layers and could boost input/output rates by up to 50%.
In addition to NAND advancements, Samsung is also enhancing its DRAM offerings. By 2027, they’re set to unveil faster, more efficient DRAM based on 0a nm technology. The development phase will commence in 2025 with 1c nm-based DRAM, followed by 1d nm DRAM in 2026, culminating in the cutting-edge iteration.
Samsung’s relentless drive to push technological boundaries positions them as a leader in the semiconductor industry, setting new standards for memory and storage solutions.
