Samsung is preparing for a major leap in memory technology as it moves toward production of its next-generation 1d DRAM, according to reports from Korean industry sources. The new DRAM manufacturing process is expected to represent one of the most important advances in memory chip design over the next few years, with mass production potentially beginning in the second half of 2027.
The 1d DRAM node is viewed as Samsung’s answer to the industry’s most advanced memory roadmaps and is considered comparable to Micron’s 1-delta technology. Samsung is reportedly already working with equipment partners to prepare the tools and manufacturing systems needed for the transition. If development stays on schedule, the company could begin installing production equipment in its factories as early as the second quarter of 2027.
Samsung’s current high-end DRAM products are based on 1c technology, which remains one of the most advanced approaches in memory manufacturing today. This generation makes heavy use of extreme ultraviolet lithography, better known as EUV, along with metal gate technology. These methods allow Samsung to apply knowledge from its logic chip manufacturing experience to improve DRAM performance, density, and efficiency.
The shift to 1d DRAM, however, is expected to be much more significant than a routine node upgrade. Unlike earlier DRAM generations, where memory cells were arranged horizontally, 1d DRAM is expected to introduce vertical capacitor stacking. This change could allow Samsung to increase memory density while improving performance and power efficiency, both of which are becoming increasingly important as demand for advanced computing continues to rise.
The production method is also expected to be more complex. Reports indicate that Samsung may use separate wafers for memory cell circuits and peripheral circuitry, later combining them into a single structure. This approach could help optimize each part of the chip separately, but it also creates new manufacturing challenges that Samsung and its equipment partners will need to solve before mass production can begin.
Industry sources suggest Samsung may finalize its detailed mass production plans by the end of 2026. If that target is met, equipment installation could follow in early 2027, with commercial production beginning later that same year. While the timeline is ambitious, it reflects the growing pressure in the semiconductor industry to deliver faster, denser, and more energy-efficient memory chips.
The timing is especially important because memory has become a critical part of the artificial intelligence hardware boom. AI accelerators and data center processors rely heavily on high-bandwidth memory, or HBM, to move large amounts of data quickly and efficiently. HBM is built by stacking DRAM dies vertically, making advanced DRAM technology essential for the next wave of AI computing.
Samsung’s current 1c DRAM is already being used for its latest HBM4 memory solutions. Looking ahead, industry observers believe 1d DRAM could play a role in future HBM5E products, offering higher capacity and better performance for next-generation AI chips, servers, and high-performance computing systems.
Samsung has also been taking a more aggressive approach to HBM development. Instead of relying on older DRAM generations, the company moved directly to newer 1c memory for its advanced HBM products and paired it with in-house base dies built using 4-nanometer process technology. This strategy shows Samsung’s intent to strengthen its position in the premium memory market, especially as demand from AI companies continues to grow.
If Samsung succeeds in bringing 1d DRAM to mass production by late 2027, it could mark a major milestone for the global memory industry. The move would not only advance conventional DRAM manufacturing but also help shape the future of high-bandwidth memory, AI infrastructure, and next-generation data center hardware.
