Silan Microelectronics to build 12-inch analog IC plant in Xiamen, accelerating its IDM expansion
Silan Microelectronics has signed a strategic cooperation agreement with the Xiamen Municipal Government and the Haicang District Government to construct a 12-inch high-end analog integrated circuit manufacturing plant in Xiamen, according to Securities Times. The move adds a major new pillar to Silan’s integrated device manufacturer strategy and deepens its collaboration with Xiamen.
The project follows the company’s launch last year of a silicon carbide (SiC) power device fab with a CNY12 billion investment, roughly US$1.68 billion. Together, the new analog IC facility and the SiC fab signal a broader push by Silan to scale production across power and mixed-signal technologies serving fast-growing markets.
Shifting high-end analog production to 12-inch (300 mm) wafers can deliver meaningful gains in throughput and cost efficiency compared to smaller wafer sizes. For customers, that can translate into improved availability and more competitive pricing for power management ICs, drivers, signal-conditioning components, sensor interfaces, and other mixed-signal chips used across consumer electronics, industrial automation, communications, and automotive systems.
By anchoring the new fab in Xiamen’s Haicang District, Silan strengthens its ties with local authorities and taps into a developing regional semiconductor ecosystem. The combination of analog IC and SiC power device manufacturing enhances vertical integration, shortens supply chains, and positions the company to meet rising demand for energy-efficient, high-reliability components.
Details such as construction timeline, capacity, and product mix were not disclosed at the time of the announcement. Even so, the agreement underscores Silan Microelectronics’ intent to ramp manufacturing scale and diversify its portfolio, while supporting Xiamen’s ambitions to grow as a semiconductor hub.
